An Antifuse programming technology is predominantly associated with _____. Antifuse technology is nonvolatile, so it is live at power-up and programming services, either from Actel or from other vendors, are also used. recommended programming practices for antifuse devices. For SoC Antifuse technology is nonvolatile, so it is live at power-up and inherently very secure.

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When the bulb blows, the entire mains voltage is applied across the single blown lamp. This technology has many applications. Articles needing additional references from May All articles needing additional references.

Whereas a fuse starts with a low resistance and is designed to permanently break an electrically conductive path typically when the current through the path exceeds a specified limitan antifuse starts with a high resistance and is designed to permanently create an electrically conductive path typically when the voltage across the antifuse exceeds a certain level. Zener zap is frequently employed in mixed-signal circuits for trimming values of analog components.

The resulting resistance of the junction is in the range of 10 ohms. This programming, performed after manufacturing, is permanent and irreversible. A standard NPN transistor structure is often used in common bipolar processes as the antifuse. Each individual street-lamp was equipped with a film cutout ; a small disk of insulating film that separated two contacts connected to the two wires leading to the lamp.

In some cases a combined circuit with zeners and transistors can be used to form a zapping matrix; with additional zeners, the trimming which uses voltages higher than the normal operational voltage of the chip can be performed even after packaging the chip.

Antifuse – Wikipedia

The conductive shunt therefore does not compromise integrity and reliability of the semiconductor device. They may be less susceptible to alpha antiruse which can cause circuits to malfunction.

The insulation of the antifuse wire withstands the ordinary low voltage imposed across a functioning lamp but rapidly breaks down under the full mains voltage, giving the antifuse action.

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May Learn how and when to remove this template message. Technoogy help improve this article by adding citations to reliable sources. Often a special bulb with no antifuse and often a slightly different rating so it blows first as the voltage gets too high known as a “fuse bulb” is incorporated into the string of lights to protect against the possibility of severe overcurrent if too many bulbs fail.

As the number of bonding pads is limited for a given size of the chip, various multiplexing strategies are used for larger number of antifuses.

Their disadvantage, however, is lower area efficiency compared to other types. In a similar fashion to that of Christmas tree lights, before the advent of high-intensity discharge lampsstreet light circuits using incandescent light bulbs were often operated as high-voltage series circuits.

An antifuse is an electrical device that performs the opposite function to a fuse. In the same fashion as with the Christmas lights prohramming above, if the lamp failed, the entire voltage of the street lighting circuit thousands of volts was imposed across the insulating film in the cutout, causing it to rupture.

QuickLogic Corporation refers to their antifuses as “ViaLinks” because blown fuses create a connection between two crossing layers of wiring on the chip in the same way that a via on a printed circuit board creates a connection between copper layers.

FPGAs in computer

Antifise diodes can be used as antifuses. The terminals of the antifuses are usually accessible as bonding pads and the trimming process is performed before wire-bonding and encapsulating the chip.

The spike is formed on and slightly below the silicon surface, just below the passivation layer without damaging it. Occasionally, the insulation fails to break down on its own, but tapping the blown lamp will usually finish the job. With a poly-diffusion antifuse, the high current density creates heatwhich melts a thin insulating layer between polysilicon and diffusion electrodes, creating a permanent resistive silicon link.

Also circuits built via the antifuse’s permanent conductive paths may be faster than similar circuits implemented in PLDs using SRAM technology. They are historically used especially with bipolar processes, where the thin oxide needed for dielectric antifuses is not available. Views Read Edit View history. Each bit contains both a fuse and an antifuse and is programmed by triggering one of the two. The antifuse is usually triggered using an approximately 5 mA current.

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Unlike Christmas lights, the circuit usually contained an automatic device to regulate the electric current flowing in the circuit, preventing the current from rising as additional lamps burned out. From Wikipedia, the free encyclopedia.

Antifuse programming technology – FPGAs

The antifuse is made using wire with a high resistance coating and this wire is coiled over the two vertical filament support wires inside the bulb. Amorphous silicon is a material usually not used in either bipolar or CMOS processes and requires an additional manufacturing step. When a sufficiently high voltage is applied across the amorphous silicon it is turned into a polycrystalline silicon-metal alloy with a low resistancewhich is conductive.

This rapidly causes the antifuse to short out the blown bulb, allowing the series circuit to resume functioning, albeit with a larger proportion of the mains voltage now applied to each of the remaining lamps.

Ordinarily for operation from mains voltagesthe lamps are wired in series. The p-n junction that serves as such diode is overloaded with a current spike and overheated. By this approach, it is possible only to lower the value of the resulting resistor.

Antifuses may be used in programmable read-only memory PROM. Certain programmable logic devices PLDssuch as structured ASICsuse antifuse technology to configure logic circuits and create a customized design from a standard IC design.

Dielectric antifuses employ a very thin oxide barrier between a pair of conductors. This page was last edited on 7 Julyat One approach for the ICs that use antifuse technology employs a thin barrier of non-conducting amorphous silicon between two metal conductors.