BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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September 7 Rev 1. These are stress ratings only and operation of the device at these or at datashet other conditions above those given in the Characteristics sections of this specification is not implied. Typical collector storage and fall time. RF power, phase and DC parameters are measured and recorded.

Exposure to limiting values for extended periods may affect device reliability. Typical collector-emitter saturation voltage. Figure 2techniques and computer-controlled wire bonding of the assembly.

Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. September 2 Rev 1. Oscilloscope display for VCEOsust. The various options that a power transistor designer has are outlined. The current in Lc ILc is still.


(PDF) BU2508AF Datasheet download

Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. UNIT 80 – pF 5.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No abstract text available Text: Now turn the transistor off by applying a negative current drive to the bu2508aaf.

Typical base-emitter saturation voltage. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Switching times test circuit. Typical DC current gain.

Isc Silicon NPN Power Transistor

No liability will be accepted by the publisher for any consequence of its use. Non-volatile, penetrate plastic packages and thus shorten the life of dafasheet transistor.

Application information Where application information is given, it is advisory and does not form part of the specification. Forward bias safe operating area. SOT; The seating plane is electrically isolated from all terminals. September 1 Rev 1. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. II Extension for repetitive xatasheet operation.


Refer to mounting instructions for F-pack envelopes.

BUAF NTE Equivalent NTE NPN horizontal outpu – Wholesale Electronics

September 6 Rev 1. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.

Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Test circuit for VCEOsust. Base-emitterTypical Application: Product specification This data sheet contains final product specifications. Stress above one or more of the limiting values may cause permanent damage to the device.

The current requirements of the transistor switch varied between 2A. Following the storage time of the transistorthe collector current Ic will drop to zero.