BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Silicon diffused power transistor buaf datasheet catalog. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.

High collectorbase voltagevcbov high speed switching. July 7 Rev 1.

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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 6 Rev 1. This data sheet contains final product specifications.

Buaf datasheet, equivalent, cross reference search. C I Region of permissible DC operation. SOT; The seating plane is electrically isolated from all terminals. Features exceptional tolerance to base drive and collector current load bu250df resulting in a very low worst case dissipation. Budf transistor equivalent substitute crossreference search. These are stress ratings only and operation dwtasheet the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, dafasheet, datasheet. Refer to mounting instructions for F-pack envelopes. July 5 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. No liability will be accepted by the publisher for any consequence of its use.

BU2508DF Silicon Diffused Power Transistor

II Extension for dayasheet pulse operation. Stress above one or more of the limiting values may cause permanent damage to the device. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Typical DC current gain. Typical collector storage and fall time. Forward bias safe operating area.

Typical base-emitter datasbeet voltage. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

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Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to eatasheet accurate and reliable and may be changed without notice.

Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. Exposure to limiting values for extended periods may affect device reliability. Typical collector-emitter saturation voltage.

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Budf philips semiconductors, budf datasheet. C 1 Turn-off current. Application information Where application information is given, it is advisory and does by2508df form part of the specification. Buaf transistor equivalent substitute crossreference search. July 1 Rev 1. July 2 Rev 1.

This data sheet contains target or goal specifications for product development.