Library of Congress Cataloging-in-Publication Data. Neamen, Donald A. Semiconductor physics and devices: basic principles / Donald A. Neamen. — 4th ed. Download Citation on ResearchGate | Semiconductor Physics and Devices: Basic Principles / D.A. Neamen. | Contenido: 1) Estructura cristalina de sólidos;. Results 1 – 30 of Semiconductor Physics And Devices by Donald Neamen and a great selection of related books, art and collectibles available now at.
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The remaining topics must be left for a second- semester course or for further study by the reader. David W Hash Cover designer: As with most textbooks, there is more material than can be conveniently covered in one semester; this allows each instructor some flexibility in designing the course to hislher own specific needs. This constant review is especially important in the first five chapters, dealing with basic physics.
Chapter 5: Bipolar Junction Transistors
Slightly less than semiconductkr of the semester is devoted to the first six chapters; the remain- der of the semester is devoted to the pn junction, thc bipolar transistor.
It is also important that the reader keep in mind that there may be questions still unanswered at the end of a course. He received his Ph. He has published many papers and is the author of Electronic Circuit Analysis and Design, 2nd edition. This hook is intended as an introduction to the subject.
The amount of physics presented in this text is phyaics than what is covered in many introductory semiconductor device books.
Listed below are two possible scenarios. No part of this publication may be reproduced 01 distributed in any form or physlcs any means, or stored in a database or retrieval system, without the prior written consent of The McGraw-Hill Companies, Inc. Two poshible orders of d.a.neameh are discussed later in a sepa- rate section in this preface.
Some ancillaries, including electronic and print components, may not be available to customers outside the United States. Interactive Composition Corporation Typeface: Chapter 1 presents an introduction to the crystal structure of solids, leading to the ideal single-crystal semiconductor material. Includes bibliographical references and index. You can publish your book online for free in a few minutes! Unfortunately, because semifonductor time constraints, every topic in evcry chapter cannot be covered in a one-semester course.
Semiconductor Physics And Devices – Donald Neamen Pages 1 – 50 – Text Version | AnyFlip
The nonequilibrium excess car- rier characteristics are then developed in Chaptcr 6. However, the text is not an encyclopedia. The second method of presentation listed, called the nonclassical approach, dis- cusses the MOS transistor d.a.nexmen the bipolar transistor. Neamen is a professor emerltus in the Department of Electrical and Computer Engineering at the University of New Mexico where he taught semicondcutor more than 25 years.
Those questions remaining unanswered at the end of the course, the reader is cncouraged to keep “in a desk drawer.
Semiconductor Physics and Devices Basic Principles – PDF Drive
Chapter 1 Classical approach Chapters 2, 3 Crystal structure Chapter 4 Selectcd semicohductor from quantum Chapter 5 mechanics and theory of solids Chapter 6 Srrniconductor physics Chapters 7, 8 Transpon phenomena Chapter 9 Selected topic, from nirnequilibriurncharacteristics Chapter 10 The pn junction and diode Chapters 11, 12 A brief discussion of the Schottky diode The bipolar transistor The MOS trilnsistor.
The physics of the basic semiconductor devices is developed in Chapters 7 through The reader is encouraged to continually refer to puysics preview sections so that the oh- jective of the chapter and the purposes of each topic can be kept in mind.
To get more targeted content, please make full-text search by clicking here.
The first case, called the clas- sical approach, covers the bipolar transistor before the MOS transistor. In order to gain this understanding, it is essential to have a thorough knowledge of the physics of the semiconductor material. John Wannemacher Project manager: Chapter 14 considers optical devices and finally Chapter 15covers power semiconductor devices. He is still a part-time instructor in the department.
I Generation of Light All of these components are vital to the understanding of both the operation of present day devices and any future development in the field. Discover the best professional documents and content resources in AnyFlip Document Base. Understanding the behavior of ex- cess carriers in a semiconductor is vital to the goal of understanding the device physics.
The prerequisites for un- derstanding the material are college mathematics. Metal-semiconductorjunctions, both rectifying and nonrectifying. Two advantages to this ap- proach are that the MOS transistor will not get shortchanged in terms of time devoted to the topic and, since a “real device” is discussed earlier in the semester, the reader may have more motivation to continue studying thih course material. This book cannot be re-exported from the country to which it is sold by McGraw-Hill.
Chapter4 presents the physics of the semiconductor in thermal equilibrium; Chapter 5 treats the transport. Although many electrical engineering students are more comfortable building electronic cir- cuits or writing computer programs than studying the underlying principles of semi- conductor devices, the material presented here is vital to an understanding of the limitations of electronic devices, such as the microprocessor. Joyce Waiters Production supervisor: Jones Senior developmental editor: A few other special topics may be briefly considered near the end of the semester.
Semiconductor Physics And Devices – Donald Neamen
Chapters 2 and 3 introduce quantum mechanics and the quantum theory of solids, which together provide the necessary basic physics.
Chapter4 presents the physics of the semiconductor in thermal equilibrium; Chapter 5 treats the transport phenomena of the charge carriers in a semiconductor. The fact that sec- tions are marked with an asterisk pbysics not minimize the importance of these subjects.
However, because the MOS transistor topic is left until the end of the semester. The words you are searching are inside this book. The physics of the metal- oxide-semiconductor field-effect transistor is presented in Chapters I I and I Qualitative Description I15 4.
There are a few references and general discussions semicondhctor processing techniques such as diffusion and ion implantation, but only where the results of this processing have direct im- pact on device characteristics.