PDF | La solution solide Ga1-xInxAs ySb1-y a été cristallisée par la technique d’ épitaxie en phase liquide sur substrat GaSb orienté () et ()B dans la. Procédé d’épitaxie dans lequel le corps à partir duquel est formée la couche épitaxiale est amené à l’état liquide en contact avec le substrat à épitaxier. Resume: Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Les points du liquidus ont ete obtenus par .

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Additionally, the model proposes an explanation for the properties of the obtained films as a function of the annealing conditions, based on optical microscope and AFM observations and bonding energy characterization.

Lasers and Masers Semiconductors Electronics. Here we develop a general approach by adapting the seed-mediated solution phase synthesis of nanocrystals in order to directly grow them on crystalline phasd films.

PACS – Phase equilibria, phase transitions, and critical points. Single crystalline nanorods are grown in epitaxy on the mica surface with a growth axis along directions and plane parallel to the substrate. Key words crystal growth from melt — epitaxial growth — gallium compounds — III V semiconductors — indium antimonide — phase diagrams — semiconductor liquive — phase diagram — liquid phase epitaxial growth — Ga sub x In sub 1 x Sb — liquidus data — In rich region — DTA measurements — solidus data — regular solution model — liquidus isotherms — thermodynamical parameters — InSb substrates — homogeneity — layer characteristics — electrical measurements — concentration measurement — to degrees C.


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Based on this splitting model, two innovative processes for fabrication of silicon films are proposed. Paris 22, The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. With the aim of increasing the size of periodically domain-structured crystals with a controlled and regular grating period, we proposed an epitaxial growth process using seeds made of thin plates domain engineered by electric field poling.

Paris Volume 9, Number 2mars Some electrical measurements were reported. It is then necessary to find the growth conditions enabling to work below the roughening temperature of these faces. Abstract An accurate ternary phase diagram in the In rich region of the Ga-In-Sb system has been established. A collection of writing tools that cover the many facets of English and French grammar, style and usage. Unfortunately, the sample thickness obtainable today limits their use to low and moderate power application.

Effects of substrate and ambient gas on epitaxial growth indium oxide thin films.

Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

Nanoselective area growth of gan by metalorganic vapor phase epitaxy on 4h-sic using epitaxial graphene as a mask G. Bulk ppktp by crystal growth from high temperature solution. Des couches de GaxIn1-xSb de 0 x 0,92 ont ete epitaxiees sur substrats d’InSb orientes dans la gamme de temperatures C. Epitaxial growth of gold on mica in an ultra-high vacuum H. L’homogeneite et les autres caracteristiques de ces couches ont ete examinees.

Toward a complete description of nucleation and growth in liquid-liquid phase separation J. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. Glossaries and vocabularies Access Translation Bureau glossaries and vocabularies.


An arrangement for measuring the thermoelectric voltage Seebeck signal during the crystal growth from a liquid zone is described. Les points du solidus resultent de la mesure de la concentration en gallium de cristaux ternaires epitaxies a partir de liquides riches en indium.

It opens attractive opportunities for the integration of nanocrystals in eiptaxie devices. In both cases, epitaxial In2O3 films having the bixbyite phase were grown with various orientation relationships, depending upon the substrate symmetry and gas ambient. Growth of epitaxial tungsten nanorods R.

Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

The nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Toward a complete description of nucleation and growth in liquid-liquid phase separation. The process consists in first growing a graphene layers film on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Oriented metallic nano-objects on crystalline surfaces by solution epitaxial growth N.

Wednesday, December 12, – 3: Growth of oriented crystalline solid film from a liquid epitaxoe contact with an underlying substrate epitaxxie a heated chamber. The study proposes different characterization of the films obtained by this process AFM, optical profilometry and 4 probe measurement.

Amorphous, polycrystalline or epitaxial gallium oxide films rn be obtained depending upon the oxygen pressure during the growth in the C temperature range.